1 000 kV GIS超聲波在線檢測系統(tǒng)設(shè)計與應(yīng)用研究 

湯會增1，陳富安1，李紅剛2 
(1 河南工業(yè)大學(xué)，河南 鄭州 450007；
2 許繼集團有限公司，河南 許昌 461000) 
 

摘 要： 介紹了GIS 超聲波局部放電檢測原理，給出了1 000 kV GIS 超聲波在線檢測系統(tǒng)設(shè)計方案，設(shè)計了檢測系統(tǒng)的硬件和軟件，通過模擬試驗和對四種常規(guī)局放類型表征參數(shù)進行歸納，總結(jié)出了超聲波檢測法的特點。對某特高壓變電站1 000 kV GIS 盆式絕緣子破損實際案例進行了分析，驗證了該1 000 kV GIS 超聲波檢測系統(tǒng)的有效性。
關(guān)鍵詞： 超聲波；1 000 kV GIS；局部放電；系統(tǒng)結(jié)構(gòu)
中圖分類號：TM643 文獻標(biāo)識碼：B 文章編號：1007-3175(2015)01-0034-04

Design and Application Study on Online Ultrasonic Detection System of 1 000 kV Gas Insulation Switch 

TANG Hui-zeng1, CHEN Fu-an1, LI Hong-gang2 
（1 Henan University of Technology, Zhengzhou 450007, China;
2 XJ Group Corporation, Xuchang 461000, China） 
 

Abstract: Introduction was made to the detecting principle of ultrasonic partial discharge (PD) detection in gas insulated switchgear (GIS). This paper gave the overall design scheme of ultrasonic 1 000 kV GIS PD on-line detection system, including the hardware and software of the detection system. The simulation test and the characteristic parameters of four conventional types of partial discharge were concluded and the characteristics of ultrasound were summarized. This paper analyzed an actual case of 1 000 kV GIS basin insulator damage in the ultra-high voltage (UHV) substation. The effectiveness of the proposed 1 000 kV GIS ultrasonic testing system was verified.
Key words: ultrasonic; 1 000 kV gas insulated switchgear; partial discharge; system structure

參考文獻
[1] 王建生，邱毓昌.氣體絕緣開關(guān)設(shè)備中局部放線監(jiān)測技術(shù)[J].電工電能新技術(shù)，2000，19(4)：44-48.
[2] 高凱，倪浩，司文榮.GIS超聲波局部放電檢測及其波形特征分析[J].華東電力，2010，38(10)：1512-1516.
[3] 周廣，劉勇，金正洪，等.1 000 kV HGIS 在線特高頻技術(shù)局放監(jiān)測的應(yīng)用[J]. 華中電力，2011，24(5)：57-62.
[4] 吳張建，李成榕，齊波，等.GIS局部放電檢測中特高頻法與超聲波法靈敏度的對比研究[J].現(xiàn)代電力，2010，27(3)：31-36.
[5] Chen Fuan, Tang Huizeng, Li Honggang.Application of On-Line Ultrasonic And UHF Partial Discharge Detection In 1000 kV
GIS[C]//Applied Mechanics and Materials VolsTransaction Technical Publications, 2014.
[6] 肖登明，董越.我國特高壓輸電工程的GIS技術(shù)[J].高電壓技術(shù)，2006，32(12)：115-117.