不間斷電源中的IGBT關斷過電壓抑制
吳濤1，陳功1，曹志輝2
1 中國電建集團中南勘測設計研究院有限公司，湖南 長沙 410014； 2 廣東電網公司韶關供電局，廣東 韶關 512028
摘 要：由于電路中雜散電感及絕緣柵雙極型晶體管(IGBT)反并聯二極管浪涌電壓的影響，IGBT在關斷過程中會產生過電壓尖峰。分析了IGBT關斷過程，提出了一種由過電壓采樣電路和動態(tài)過電壓抑制電路構成的有源IGBT過電壓抑制電路方案，并對該方案進行仿真及實驗，結果表明，該過電壓抑制電路能有效抑制IGBT過電壓產生，防止IGBT過電壓損壞，提高了UPS電源的可靠性和工作效率。
關鍵詞：不間斷電源；雜散電感；絕緣柵雙極型晶體管；過電壓
中圖分類號：TM464 文獻標識碼：A 文章編號：1007-3175(2015)12-0028-05
Research on Overvoltage During Switch-Off of Insulated Gate Bipolar Transistor in Uninterruptable Power Supply
WU Tao1, CHEN Gong1, CAO Zhi-hui2
1 Power China Zhongnan Engineering Corporation Limited, Changsha 410014, China; 2 Shaoguan Power Bureau of Guangdong Power Grid Company, Shaoguan 512028, China
Abstract: Because of the impacts of stay inductances and antiparallel diode surge voltage of insulated gate bipolar transistors (IGBTs) on circuits, overvoltage peak will turn up during the switch-off of IGBTs. This paper analyzed the switch-off process of IGBTs and proposed a kind of active IGBTs overvoltage suppression circuit scheme composed of an overvoltage sampling circuit and a dynamic overvoltage suppression circuit. The simulation and experiment results show that the overvoltage suppression circuit can suppress the overvoltage of IGBTs effectively and prevent IGBTs broken down, which raises the reliability of power supply and its working efficiency.
Key words: uninterruptable power supply; stay inductance; insulated gate bipolar transistor; overvoltage
參考文獻
[1] Satoh K.Technologies and trends related to power module[C]//International Symposium on Semiconductor Manufacturing, 2010.
[2] Phipps J P.An IGBT with sustaining voltage determined by an integrated collectorgate clamp[C]//Applied Power Electronics Conference and Exposition, 1990.
[3] Iwamuro N, Harada Y, Yamazaki T, Kumagai Naoki, Seki Y.A new vertical IGBT structure with a monolithic over-current, over-voltage,and over-temperature sensing and protecting circuit[J].IEEE Electron Device Letters,1995，16(9)：399-401.
[4] Shen Z J, Robb S P, Cheng C.Design and characterization of the 600 V IGBT with monolithic over-voltage protection[C]//27th Annual IEEE Power Electronics Specialists Conference, 1996.
[5] Ogura T, Sugiyama K, Omura I, et al.A New Stored-Charge-Controlled Over-Voltage Protection Concept for Wide RBSOA in High-Voltage Trench-IEGTs[C]//IEEE International Symposium on Power Semiconductor Devices and IC's, 2006.
[6] Dulau L, Pontarollo S, Boimond A, et al. A new gate driver integrated circuit for IGBT devices with advanced protections[J].IEEE Transactions on Power Electronics, 2006，21(1)：38-44.
[7] Tongkhundam G, Konghirun M.Improved gate signal generation scheme of auxiliary IGBT switches for VDC/2-retained 2τ-delayed overvoltage suppression method[C]//3rd IEEE Conference on Industrial Electronics and Applications, 2008.
[8] Flores D, Hidalgo S, Rebollo J, et al.Investigation on 3.3 kV-50 A IGBT protection against over-voltage conditions[C]//13th European Conference on Power Electronics and Applications, 2009.
[9] Hsieh A P-S , Udrea F, Wei-ChiehLin.Integrated avalanchediode for 600 V trench IGBT over- voltage protection[C]//International Semiconductor Conference, 2011.
[10] Hamad M S, Abdelsalam A K, Williams B W.Over-voltage protection of single phase grid connected current source inverters using a simplified passive network[C]//IET Conference on Renewable Power Generation, 2011.
[11] Finney S J, Williams B W, Green T C.RCD snubber revisited[J].IEEE Transactions on Industry Applications,1996，32(1)：155-160.
[12] Diamond J M.Varistor control of inductive transients[J].IEEE Transactions on Circuits and Systems I: Fundamental Theoryand Applications, 1992，39(6)：478-480.
[13] Lobsiger Y, Kolar J W.Closed-loop IGBT gate drive featuring highly dynamic di /dt and dv /dt control[C]//IEEE Energy Conversion Congress and Exposition, 2012.
